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ZXMN3G32DN8
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ V GS =10; T A =25 ° C (b)
@ V GS =10; T A =70 ° C (b)
@ V GS =10; T A =25 ° C (a)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T A =25 ° C (a)(d)
Linear derating factor
Power dissipation at T A =25 ° C (a)(e)
Linear derating factor
Power dissipation at T A =25 ° C (b)(d)
Linear derating factor
Operating and storage temperature range
Symbol
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
P D
T j , T stg
Limit
30
±20
7.1
5.7
5.5
33.6
3.1
33.6
1.25
10
1.8
14
2.1
17
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/ ° C
W
mW/ ° C
W
mW/ ° C
° C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to
Junction to
ambient (a)(d)
ambient (a)(e)
R JA
R JA
100
70
° C/W
° C/W
Junction to ambient (b)(d)
Junction to lead (f)
R JA
R JL
60
51
° C/W
° C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 μ s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Issue 1 - January 2008
? Zetex Semiconductors plc 2008
2
www.zetex.com
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